https://www.selleckchem.com/products/pds-0330.html
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current-voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 103-105 at the forward to reverse current at ±1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conductio
Like
Comment
Share
