https://www.selleckchem.com/pr....oducts/sar439859.htm
Po-C24-3D is an indirect narrow band gap (1.02 eV) semiconductor, while Po-C32-3D possesses a wider indirect band gap of 3.90 eV, which can be also applied in optoelectronic device.In this work, using density functional theory based electronic structure calculations, we carry out a comparative study of geometric, mechanical, electronic, magnetic, and thermoelectric properties of Co x TaZ alloys, where Z = Si, Ge and Sn and x = 1 and 2. In the present study, a systematic approach has been taken to perform calculations to probe the poss
Like
Comment
Share
