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In the plasmonic metal-semiconductor systems, the interfacial structure is vital for both charge separation and photocatalytic reaction. However, the role of interfacial defects, a ubiquitous phenomenon in the metal-semiconductor heterostructure, is not well understood, especially for the hot hole-involved water oxidation reaction. Herein, we studied the effect of interfacial defects, derived from oxygen vacancies, on plasmonic photocatalytic water oxidation. In addition, we found that the plasmon-induced water oxidation activity decreased
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