https://www.selleckchem.com/pr....oducts/emricasan-idn
We have studied the capability of He+ focused ion beam (He+-FI patterning to fabricate defect arrays on the Si/SiO2/Graphene interface using a combination of atomic force microscopy (AFM) and Raman imaging to probe damage zones. In general, an amorphized 'blister' region of cylindrical symmetry results upon exposing the surface to the stationary focused He+ beam. The topography of the amorphized region depends strongly on the ion dose, DS , (ranging from 103 to 107ions/spot) with craters and holes observed at hi
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