https://e3ligasesignal.com/ind....ex.php/disturbing-bi
Using 2D semiconducting transition-metal dichalcogenides, the capability to apply ionic-gate spectroscopy to look for the semiconducting bandgap, also to accumulate electron densities above 1014 cm-2 are demostrated, causing gate-induced superconductivity in MoS2 multilayers. As LICGCs tend to be implemented in a back-gate configuration, they leave the top of product revealed, enabling the usage of surface-sensitive techniques (such as for in
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