https://www.selleckchem.com/JAK.html
Achieving efficient devices while maintaining a high fabrication yield is a key challenge in the fabrication of solution-processed, perovskite-based light-emitting diodes (PeLEDs). In this respect, pinholes in the solution-processed perovskite layers are a major obstacle. These are usually mitigated using organic electron-conducting planarization layers. However, these organic interlayers are unstable under applied bias in air and suffer from limited charge carrier mobility. In this work, we present a high brightness p-i-n PeLED based on a novel bla
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