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Strain engineering provides an efficient strategy to modulate the fundamental properties of semiconducting structures for use in functional electronic and optoelectronic devices. Here, we report on how the strain affects the bandgap, optical anisotropy and stability of two-dimensional (2D) perovskite (BA)2(MA)n-1PbnI3n+1 (n = 1-3) microplates, using photoluminescence spectroscopy. Upon applying external strain, the bandgap decreases at a rate of -5.60/-2.74/-1.38 meV per % for n = 1, 2, and 3 2D perovskites, respectively. This change of
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