https://www.selleckchem.com/Bcl-2.html
Extensive numerical experiments have shown that AGBT is a state-of-the-art framework for molecular property prediction.Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application. Thus, it should be considered from the stage of designing the HP for memory applications. Here, we design the perovskite memory using
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