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Fermi level pinning from the oxide is reduced in the case of Al2O3which enables us to observe ambipolar transport in a bilayer MoS2FET. These results highlight that MoS2is indeed an ambipolar material, and the absence of ambipolar transport in MoS2FETs is strongly correlated to its dielectric environment and processing conditions.We assessed the effects of ultra dry-air plasma surface treatments on the properties of Al2O3-GPTMS-PMMA hybrid dielectric layers for applications to high-performance amorphous Indium Gallium Zinc Oxide (a-IGZ
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