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In this work, we unravel a facile solution-based method to prepare chromium germanium telluride, Cr2Ge2Te6 (CGT) quantum dots (QDs), which present strong light-matter interactions with monolayer transition metal dichalcogenides (TMDs) in their CGT/TMD vertical heterostructures. The heterostructures' optoelectronic properties were controlled by simply varying the QDs thickness. We observed contrasting emissions from monolayer TMDs in the various CGT QDs-TMDs (of WS2, WSe2 and MoS2) heterostructures depending on the density of QDs in the
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