https://www.selleckchem.com/pr....oducts/cilofexor-gs-
Effectively restraining random fluctuation of layer thickness (RFT) during the thin-film epitaxy plays an essential part in improving the quality of low-dimensional materials for device application. While it is already challenging to obtain an ideal growth condition for thickness control, the tangle of RFT with interfacial problems makes it even more difficult to guarantee the properties of heterostructures and the performance of devices. In our research, the RFT of potential barriers and wells within a semiconductor multilaye
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