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We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.The interface reaction between a metal layer and a layer of amorphous indium-gallium-zinc oxide was investigated. Oxygen atoms at the interface bond to the metal atoms and form metal oxide. The reaction depends on the annealing temperature and ambient conditions. The thickness of the metal oxide at the interface increased with the annealing temperatures. The reaction relies on the Gibbs free energy for oxidation. Ta, which h

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