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The Ge buffer level development is made from low-temperature growth at 400 °C and high-temperature growth at 650 °C. The effect associated with the epitaxial quality of this Ge buffer from the defect thickness within the Si0.2Ge0.8/Ge bunch happens to be studied. In this part, different thicknesses (0.6, 1.2 and 2.0 µm) of the Ge buffer from the high quality of the Si0.2Ge0.8/Ge pile framework have now been investigated. The thicker Ge buffer layer can enhance surface r
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