https://www.selleckchem.com/products/dasa-58.html
Optoelectronic memristor is a promising candidate for future light-controllable high-density storage and neuromorphic computing. In this work, light-tunable resistive switching (RS) characteristics are demonstrated in the CMOS process-compatible ITO/HfO2/TiO2/ITO optoelectronic memristor. The device shows an average of 79.24% transmittance under visible light. After electroforming, stable bipolar analog switching, data retention beyond 104 s, and endurance of 106 cycles are realized. An obvious current increase is observed under 405 nm
Like
Comment
Share
