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0 MHz and 4.7 MHz for the center frequency and 1.0 MHz and 12.8 MHz for the transmission zero frequency, respectively.Device guidelines for reducing power with punch-through current annealing in gate-all-around (GAA) FETs were investigated based on three-dimensional (3D) simulations. We studied and compared how different geometric dimensions and materials of GAA FETs impact heat management when down-scaling. In order to maximize power efficiency during electro-thermal annealing (ETA), applying gate module engineer

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