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In addition, the external quantum efficiency is as high as 32.1%. On the other hand, the response time of τrise and τfall is estimated to be 7.51 and 36.7 μs, respectively. Finally, an image sensor composed of a 8 × 8 PtTe2-based photodetector array was fabricated, which can record five near-infrared (NIR) images under 980 nm with a satisfying resolution. The result demonstrates that the as-prepared PtTe2 material will be useful for application in NIR optoelectronics.Controlling the handedness of dynamic helical nanostructures of supra

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