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This, in change, offers a design methodology to regulate correctly generated fees and enables anyone to make use of SPADs as conventional photodiodes (PDs) in a four transistor pixel of a complementary metal-oxide-semiconductor (CMOS) picture sensor (CIS) with quick exposure some time without carrier overflow. Such procedure is shown by experiments with a 6 µm size 400 × 400 pixels SPAD-based CIS designed using this methodology.Tremendous attempts have been made these final years to increase our understanding of i
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