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Chemical vapor deposition (CVD) has become a promising approach for the industrial production of graphene films with appealing controllability and uniformity. However, in the conventional hot-wall CVD system, CVD-derived graphene films suffer from surface contamination, mainly amorphous carbon, originated from the gas-phase reaction during the high-temperature growth. Herein, we demonstrated that the cold-wall CVD system was capable of suppressing the gas-phase reaction, and achieved the superclean growth of graphene films in a control