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The segregation tendencies, defect energetics and electrical behavior of transition-metal (Mn and Co) dopants in wide band gap semiconductor (GaN and ZnO) nanowires are investigated by performing density-functional supercell calculations with the Hubbard U correction. Defect calculations and ab initio molecular dynamics simulations are carried out for a comparative exploration of various doping configurations where the dopant resides on interior, subsurface or surface sites. Mn and Co dopants in GaN and ZnO nanowires, respectively, are found to have differe