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There are unrevealed factors that bring about the performance variations of resistive switching devices. In this work, Pt/CeOx/Pt devices prepared by magnetron sputtering showed rectification in their asymmetrical current-voltage (I-V) curves during voltage sweeps. X-ray photoelectron spectroscopy (XPS) showed that the deposited CeOx film had an inhomogeneous composition, and more oxygen vacancies existed in CeOx near the top electrode. The asymmetrical resistance change of the Pt/CeOx/Pt devices can be explained by the presence of more
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