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In contrast, double Si-dangling bond defects are not active trap centers. These findings provide fundamental physical insights for understanding the hysteresis behavior of MoS2 FETs and provide vital support for understanding and solving the reliability of nanoscale devices.Active matter refers to the nonequilibrium system composed of interacting units that continually dissipate energy at a single-unit level and transduce it into mechanical force or motion. Such systems are ubiquitous in nature and span most of the biological scales, ra