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This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQ could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due t
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