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Our results provide insights of the mechanism of irradiation resistance in the high entropy alloy and could be useful in material design for irradiation tolerance and accident tolerance materials in nuclear energy.Ferroelectric random-access memories based on conventional perovskite materials are non-volatile but suffer from lack of CMOS compatibility, scalability limitation, and a destructive reading scheme. On the other hand, Ferroelectric Tunnel Junctions (FTJs) based on CMOS compatible hafnium oxide are a promising candidate for fu
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