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According to the fractography of the tensile-fractured surfaces undertaken using optical and scanning electron microscopy, fractures of the iron-bearing phases were found to be the source of cracking in alloys with high Si content. In the case of those with low Si content (≤3 mass%), cracks were believed to have been caused by the debonding of iron-bearing phases from the aluminum matrix.We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a
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