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The first-principles calculations and hereditary algorithm modeling in our work unveil the existence of extremely stable, indirect gap trigonal-Zr2N2Se and trigonal-Hf2N2Se stages, which progress to direct space, monoclinic materials in monolayer form. These frameworks display the specified optoelectronic properties, such as for example exceptionally large visible-UV absorption spectra (105-106 cm-1) and exciton binding power below 0.02 eV. Powerful hybridization involvin

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