https://www.selleckchem.com/pr....oducts/CI-1040-(PD18
In this work, we present the study of the atomic composition in amorphous SiXGeYHZ films deposited by radio frequency (RF-13.56 MHz) plasma discharge at low deposition temperature. A study and control of Si and Ge atoms termination using H-dilution in SiGeH alloys deposited by RF plasma discharge was conducted and we made a comparison with low-frequency plasma discharge studies. Solid contents of the main elements and contaminants were determined by SIMS technique. It was found that for low dilution rates from RH = 9 to 30, t
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