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Extreme ultraviolet lithography (EUVL) presents promise for the advanced technology node in the manufacturing of integrated circuits. The imaging performance of EUVL is significantly affected by the aberration of projection optics. To obtain one optimum aberration for different test patterns, an inverse optimization method for aberration is proposed in this paper. The aberration models of three types of test patterns are first established by applying the backpropagation (BP) neural network. Then choosing the common indicators of the lit
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