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Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness1-4. However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The uniqu
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