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19 mg/g, which has not been previously reported.In the current research, p-type Si/n-type nanocrystalline FeSi₂ heterojunctions were fabricated at room temperature with an argon pressure of 2.66×10-1 Pa by means of the utilization of a radiofrequency magnetron sputtering technique. These heterojunctions were studied for the carrier transportation mechanism and near-infrared (NIR) light detection at various temperatures ranging from 300 K down to 150 K. At 300 K, the fabricated heterojunctions displayed a typical rectifying action together
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