https://www.selleckchem.com/pr....oducts/diphenyleneio
We investigate the optical properties of strain-free mesoscopic GaAs/Al(x)Ga(1-x)As structures (MGS) coupled to thin GaAs/A(x)Ga(1-x)As quantum wells (QWs) with varying Al content (x). We demonstrate that quenching the QW emission by controlling the band crossover between AlGaAs X-point and GaAs Gamma-point gives rise to long carrier lifetimes and enhanced optical emission from the MGS. For x = 0.33, QW and MGS show typical type-I band alignment with strong QW photoluminescence emission and much weaker sharp rec
Like
Comment
Share
