https://www.selleckchem.com/pr....oducts/Gefitinib.htm
In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si1-xCxH) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. The thin films are characterized using Fourier Transform Infrared spectroscopy (FTIR), PL spectroscopy, and Energy-Dispersive X-ray Spectroscopy (EDS). According to the results of the structural characterization, it is deduced that a structural r
Like
Comment
Share
