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The light trapping effect of ZnO nanowires (NWs) is attracting increasing attention as it effectively enhances the photoelectric effect. In this paper, high-density ZnO NWs are grown on a metal-semiconductor-metal structure MgZnO film UV photodetector (PD) as a light trapping unit. The photogenerated carriers diffuse along the longitudinal axis of the ZnO NWs, then diffuse onto the thin film and are collected by an applied bias electrode. When the device is connected to the NWs, the responsivity is about 12 times higher than that of th
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