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But, it is still difficult to achieve effective photodetection into the 2 µm wavelength musical organization making use of group-IV-based semiconductors. Here we provide an investigation of GeSn resonant-cavity-enhanced photodetectors (RCEPDs) on silicon-on-insulator substrates for efficient photodetection within the 2 µm wavelength musical organization. Narrow-bandgap GeSn alloys are used whilst the energetic layer to extend the photodetection range to cover the 2 µm
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