https://www.selleckchem.com/MEK.html
High hardness and corrosion resistance of SiC (silicon carbide) bulk materials have always been a difficult problem in the processing of an all-SiC piezoresistive pressure sensor. In this work, we demonstrated a SiC sealing cavity structure utilizing SiC shallow plasma-etched process (≤20 μm) and SiC-SiC room temperature bonding technology. The SiC bonding interface was closely connected, and its average tensile strength could reach 6.71 MPa. In addition, through a rapid thermal annealing (RTA) experiment of 1 min and 10 mins in N2 atmosphere of 100
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