https://www.selleckchem.com/products/ly333531.html
Benefiting from the nanopillar modification, the proposed PD shows a record large detectivity of 1.85 × 1017 Jones, a small dark current of 5.2 nA at +3 V bias, and a nearly three order of magnitude rectification ratio enhancement compared with non-nanopillar PDs. This pioneering work provides a novel nanostructure-modifying method for combining 2D materials and 3D semiconductors to improve the performances of electronic and optoelectronic devices.Luminescent materials that emit in the narrowband ultraviolet-B (NB-UVB; 310-313 nm) spec
Like
Comment
Share
