https://www.selleckchem.com/
The growth of hetero-epitaxial ZnO-AlN core-shell nanowires (NWs) and single crystalline AlN films on non-polar ZnO substrate at temperature of 380 °C by atomic layer deposition (ALD) was investigated. Structural characterization shows that the AlN shells have excellent single-crystal properties. The epitaxial relationship of [0002]ZnO//[0002]AlN, and [10-10]ZnO//[10-10]AlNbetween ZnO core and AlN shell has been obtained. The ZnO NW templates were subsequently removed by annealing treatment in forming gas, resulting in ordered arrays of AlN single-crystal n
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