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3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN-SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.Background and objectives Psoriasis is a chronic immune-mediated skin disease caused by several complex factors, both environmental and genetic, many of which are still not fully understood. Nowadays, several groups o
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