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MoS2, an emerging material in the field of optoelectronics, has attracted the attention of researchers owing to its high light absorption efficiency, even as an atomically thin layer. However, the covered spectra of the reported MoS2-based photodetectors are restricted to the visible range owing to their electronic bandgap (∼1.9 eV). Strain engineering, which modulates the bandgap of a semiconductor, can extend the application coverage of MoS2 to the infrared spectral range. The shrinkage of the bandgap because of the tensile strain on
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