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Any further improvement is seen with the addition of the InGaN UL into the structure, which is verified by similar values associated with the efficient carrier lifetime expected from time-resolved experiments. Contrary to the case of planar c-plane QW in which the improved efficiency is attributed to a very good loss of point defects , the inclusion of an InGaN UL seems to have no impact in case of radial m-plane QW.A novel and efficient oxidative esterification for the selective synthesis of α
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