https://www.selleckchem.com/products/blu-554.html
We investigated the influence of the flake thickness for molybdenum disulfide (MoS2) field effect transistors on the effect of a 150 keV high-energy proton beam applied on these devices. The electrical characteristics of the devices with channel thicknesses ranging from monolayer to bulk were measured before and after proton irradiation with a proton fluence of 5 × 1014 cm-2. The subthreshold swing (SS), threshold voltage shift and electron mobility were extracted with the Y-function method after proton irradiation and significant degra
Like
Comment
Share
