https://www.selleckchem.com/pr....oducts/ezatiostat.ht
Gallium arsenide (GaAs) provides a suitable bandgap (1.43 eV) for solar spectrum absorption and allows a larger photovoltage compared to silicon, suggesting great potential as a photoanode toward water splitting. #link# Photocorrosion under water oxidation condition, however, leads to decomposition or the formation of an insulating oxide layer, which limits the photoelectrochemical performance and stability of GaAs. In this work, a self-limiting electrodeposition method of Ni on GaAs is reported to either generate ultra-thin continuo
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