https://www.selleckchem.com/products/msc-4381.html
Halide perovskite (HP) materials are actively researched for resistive switching (RS) memory devices due to their current-voltage hysteresis along with low-temperature processability, superior charge mobility, and simple fabrication. In this study, all-inorganic RbPbI3 perovskite has been doped with Cl in the halide site and incorporated as a switching media in the Ag/RbPbI3-xCl x /ITO structure, since pure RbPbI3 is nonswitchable. Five compositions of the RbPbI3-xCl x (x = 0, 0.3, 0.6, 0.9, and 1.2) films are fabricated, and the condu
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