https://sirtinolinhibitor.com/....multicellular-string
Germanium is well-poised to serve as the channel material in FET products because it boasts an electron and gap flexibility a lot more than twice and four times that of Si, respectively. Nonetheless, its volatile local oxide tends to make its passivation an essential action toward its possible integration into future FETs. The International Roadmap for Devices and Systems (IRDS) predicts continued hostile scaling not merely of this device siz
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