https://www.selleckchem.com/products/snx-2112.html
Titanium oxide (TiO x ) has recently emerged as an electron-selective passivating contact for solar cell and semiconductor device applications. The mechanism behind this function has been attributed to the lower energy barrier for electrons than holes at the TiO x /semiconductor interface. Here we report an antithetic function of TiO x nanolayers (∼5 nm), which were grown by atomic layer deposition (ALD) on either planar or textured crystalline silicon (Si) without a buffer layer, acting as efficient hole-selective contacts with excell
Like
Comment
Share
