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In this paper, we present microwave filters that are based on 6-nm-thick ferroelectric thin films of hafnium oxide doped with zirconium (HfZrO), which are tunable continuously in targeted bands of interest within the frequency range 0.1-16 GHz, when the applied direct current (DC) voltage is swept between 0 V and 4 V. Here, we exploit the orthorhombic polar phase in HfO2 through a careful doping using zirconium in an Atomic Layer Deposition (ALD) process, in order to guarantee phase stabilization at room temperature. Polarization versus
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