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As a result, different spatial cost regions (SCRs) tend to be formed on both insulator edges. The lowest leakages are located through the piles, with complete Al2O3 width values of 8-10 nm, that also offer a diffusive buffer for hydrogen. The principal device of electron transportation through the integrated insulator during the weak field E less then 1 MV/cm is thermionic emission. The Poole-Frenkel (PF) process of e

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