https://inflammationinhibitor.....com/index.php/the-ou
Non-uniform Si incorporation into GaN is observed when step-bunches are present at first glance during epitaxy. In this study we show that local Si concentration in the area of step-bunch is approximately 3 x higher than in the region between step-bunches. ECE spatial resolution inside our experiment is determined become about 50 nm. This is why ECE a simple and quantitative probing tool for regional three-dime
Like
Comment
Share
