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In this work, the structural, electrical, and optical properties of bilayer SiX (X= N, P, As, and Sb) are studied using density functional theory. Five different stacking orders are considered for every compound and their structural properties are presented. The band structure of these materials demonstrates that they are indirect semiconductors. The out-of-plane strain has been applied to tune the bandgap and its electrical properties. The bandgap increases with tensile strain, whereas, compressive strain leads to semiconductor-to-meta
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