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The optical and electrical characterization indicates that the electrical and optical performance of the device would be weakened by excessive doping concentration. At 77 K, the 50% cutoff wavelength of the device is about 8 µm, the 100% cutoff wavelength is 10 µm, the maximum quantum efficiency is 62.4%, the maximum of responsivity is 2.26 A/W at 5 µm, and the maximum RA of the device is 1259.4 Ω cm2. Besides, the specific detectivity of Be 780 °C-doped detector without gate electrode exhibits a peak of 5.6 × 1010 cm Hz1/2/W at 5 µm wit